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CNet CBD-021 band gap of pure ZnSe thin films was found to be 2. PL emission spectra showed a clear blue shift for ZnSxSe1-x films compared to ZnSe due to the sulphur content in the films which increase the band gap.

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The band gap of ZnSSe can be controlled by sulfur to selenium ratio in the alloy. The morphology of the ZnSe thin films changed from small randomly shaped crystallites to triangles whereas the CNet CBD-021 of ZnSxSe1-x was mainly based on cuboids. Introduction Metal selenides are wide band gap materials and have applications in light-emitting devices, solar cells, sensors, and optical recording materials [1] [2] [3] [4]. ZnSe is ideal material for blue-green laser diodes [1] [2]mid-IR laser sources for remote sensing applications [5]and in optically controlled switching devices due to its large photo resistivity [6]. Zinc selenide CNet CBD-021 films had been fabricated by photochemical deposition PCD [7]chemical bath deposition CBD [8] [9] and electrochemical deposition ECD [10]but all these methods have their own drawbacks including higher annealing temperatures for PCD, controlling rate of reaction for CBD and the use of only conductive substrates for ECD [7].

Several reports have been published for the use of single-source precursors for the deposition of metal chalcogenide [11] - [22]. Other metal complexes used as single source precursors include: When the sulphur composition is larger than 0. Herein we report the deposition of highly crystalline hexagonal ZnSe thin films from bis diethyldiselenocarbamato zinc II complex and ZnSSe composite from a mixture of bis diethyldiselenocarbamato zinc II and bis diethyldithiocarbamato zinc II complexes and their detailed optical and structural characterisation. The white precipitate of [Zn S2CNEt2 2] was separated by filtration, washed with water and dried under vacuum. Indium metal is used as a reference to calibrate the instrument.

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In a typical experiment, the precursor was dissolved in 15 CNet CBD-021 THF in a two-necked mL round-bottom flask. The flask was connected with an argon gas inlet carried the aerosols generated by a PIFCO ultrasonic humidifier to the reactor tube connected to other neck of the flask and placed in a Carbolite furnace.

The gas flow rate was controlled at Sccm through a Platon flow gauge. The precursor mist was thermolysed in the hot zone at the surface of glass substrate and resulted in the deposition of thin film as reported previously [39]. The analysis of the complexes after 5 years proved that no decomposition occurred. These complexes are soluble in common organic solvents such as CNet CBD-021, THF, chloroform. Both decompose in CNet CBD-021 same the same manner and in the same temperature range vide infra making them suitable to be used as a mixture in different ratios to control the sulfur or selenium concentration in the alloy.

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The effect of precursor concentration and deposition temperature on the stoichiometric composition and morphology of the ZnSe and ZnSSe thin films were investigated. The sharp transition shows a one-step decomposition for both complexes to give the metal chalcogenides and all the rest of impurities volatilised. The less quantity of the residue appears to be due to the volatility of sulphur and selenium at high temperatures. The main peaks at about Figure 2 b shows the SEM images of the films with an inset at higher magnification. The films are based on Figure 1. EDX CNet CBD-021 showed Zn: Se ratio as PL spectra showed a very strong emission between to nm Figure 3 b. The emission maximum shift towards the higher energy, as compared to the bulk values, is due to the smaller size of crystallites and large surface defects and Zn vacancies at the interstitial sites [46].

Again the films Figure 3. Sticks pattern is the reference patterns for cubic ZnSe0.

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It can be noted that CNet CBD-021 higher the x-value the more the 1 1 1 peak shifts from the ZnSe 1 1 1 peak to ZnS 1 1 1 peak as reported [35]. EDX result showed the ratio of Zn: EDX results showed the ratio of Zn: The elemental map of the films showed uniform distribution of elements on the entire area of the substrate Figure 6. Inset shows images at x magnification. Other peaks CNet CBD-021 similar to those observed for the films obtained from 1: Whereas the one with 1: Se showed PL absorption about nm which gave an average band gap of 2.

Both values found to be higher than the band gap for ZnSe 2. PL absorption showed that the absorption shifted towards blue region because of the presence CNet CBD-021 S and PL CNet CBD-021 decreases with increase in S content in the ZnSSe films. PL spectra measured for these films showed blue shift compared to ZnSe films and showed band gap around 2.

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The values showed CNet CBD-021 agreement with the reported values of ZnSxSe1? Conclusion The band gap of ZnSe had been tuned from 2.

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The morphology of the films CNet CBD-021 changed by addition of sulphur into the selenium precursor. The recent use of thin film absorber layers in solar energy conversion devices has led to the real possibility of sustainable and inexpensive replacements for silicon-based photovoltaics based on compound semiconductors. CNet CBD - network adapter overview and full product specs on CNET.

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